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NSN 5961-01-595-5644, 5961015955644
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 015955644
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-01-595-5644

National Stock Number (NSN) 5961-01-595-5644, or NIIN 015955644, (transistor) was assigned May 2, 2011 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has been procured by the US Government within the last year, but shows no recent (last 90 days) procurement activity. There have been 6 contracts issued for this part number, with 6 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 3 different suppliers. The last contract numbers awarded were: SPE7M524P1400, SPE7M523P5442, SPE7M523P5155, SPE7M523P4699, SPE7M522P6730. The total value of the awarded contracts has been US$ 5,675.34.

This NSN is unique to one weapons system.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Feb 05, 2014, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961015955644 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 1.60 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL
(ABBH) PLASTIC
OVERALL HEIGHT
(ABKW) 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH
(ABHP) 10.42 MILLIMETERS MAXIMUM
OVERALL WIDTH
(ABMK) 6.60 MILLIMETERS MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY
(CXCY) 100V SINGLE N CHANNEL HEXFET POWER MOSFET IN A D-PAK PACKAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 79.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
TERMINAL TYPE AND QUANTITY
(TTQY) 3 INSULATED WIRE LEAD
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

Manufacturer Part Numbers


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