NSN 8405-15-104-6000, 8405151046000
UNIFORME,UOMO

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
CURRENT RATING PER CHARACTERISTIC: (CTQX) 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) METAL
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.220 INCHES NOMINAL
OVERALL LENGTH: (ABHP) 0.210 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: (AXGY) TERMINAL
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
SPECIFICATION/STANDARD DATA: (ZZZK) 80131-RELEASE5298 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: (AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH: (ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD