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NSN 5961-00-082-4007, 5961000824007
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 000824007
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-082-4007

National Stock Number (NSN) 5961-00-082-4007, or NIIN 000824007, (transistor) was assigned January 1, 1961 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 10 suppliers. Today, 8 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 7 suppliers are deemed design controlled or valid supply parts.

This part number is actively being procured by the US Government, with procurement history within the last 90 days. There have been 9 contracts issued for this part number, with 9 awards given. There is moderate competition for this NSN. The US Government has awarded contracts to 6 different suppliers. The last contract numbers awarded were: SPE7M125P7329, SPE7M516M3739, SPE7M516M3739, SPE7M515MB537, SPE7M515V2361. The total value of the awarded contracts has been US$ 321,012.99.

This NSN is somewhat common among different platforms, belonging to 3 different weapons systems.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961000824007 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS CASE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 7.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS CASE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC7.50 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 1.280 INCHES MAXIMUM1.280 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.560 INCHES MAXIMUM0.560 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS CASE200.0 CELSIUS CASE
MOUNTING METHOD
(AXGY) TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH
(ABJT) 0.550 INCHES MINIMUM0.550 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 1 THREADED STUD AND 2 TAB, SOLDER LUG2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
MOUNTING METHOD
(AXGY) TERMINAL
INCLOSURE MATERIAL
(ABBH) METAL

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