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NSN 5961-00-951-8877, 5961009518877
Cancelled -> Replaced by 5961009251862

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009518877
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-951-8877

National Stock Number (NSN) 5961-00-951-8877, or NIIN 009518877, (transistor) was assigned May 4, 1966 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN replaces 2 stock numbers: 5961007634638, 5961009251862.

There are 10 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 6 suppliers. Today, 4 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 5 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) Acquisition of this part is controlled by QPL procedures. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009518877 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 750.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 CELSIUS JUNCTION
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL DIAMETER
(ADAV) 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA
(ZZZK) 81349-MIL-S-19500/263 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT
(TEST) 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 1.0 MAXIMUM DC, OPEN-CIRCUIT VOLTAGE, FLOATING POTENTIAL, BETWEEN THE COLLECTOR AND BASE, WITH THE EMITTER BIASED IN THE REVERSE DIRECTION WITH RESPECT TO THE BASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 175.0 DEG CELSIUS JUNCTION
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
INCLOSURE MATERIAL
(ABBH) METAL
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM

Manufacturer Part Numbers

2N1716

RNCC
C
RNVC
1
3527500390

RNCC
C
RNVC
1
7A31

RNCC
C
RNVC
1
7A31

RNCC
C
RNVC
1
910300033

RNCC
C
RNVC
1
D7A31

RNCC
C
RNVC
1
DMS81052B

RNCC
5
RNVC
9
JAN2N1716

RNCC
2
RNVC
2
MILS19500263

RNCC
5
RNVC
9
X163B48

RNCC
C
RNVC
1

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