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NSN 5961-01-317-6590, 5961013176590
SEMICONDUCTOR DEVICE SET

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013176590
Codification Country
United States
Item Name Code
INC 20590
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-317-6590

National Stock Number (NSN) 5961-01-317-6590, or NIIN 013176590, (semiconductor device set) was assigned April 4, 1990 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 7 manufacturer part numbers associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 6 different weapons systems.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on May 21, 2008, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20590. [A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES:ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013176590 contains gold.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

COMPONENT FUNCTION RELATIONSHIP
(ASDD) MATCHED
COMPONENT NAME AND QUANTITY
(ASKA) 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED
(CBBL) GOLD PLATED LEADS
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-61 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY
(AKPV) 1 ALL TRANSISTOR
MOUNTING METHOD
(AXGY) THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES ALL TRANSISTOR
OVERALL LENGTH
(ABHP) 1.062 INCHES MINIMUM AND 1.245 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL AND LOCATION
(PMLC) TERMINAL SURFACES GOLD
PRECIOUS MATERIAL
(PRMT) GOLD
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY
(TTQY) 3 TAB, SOLDER LUG ALL TRANSISTOR
THREAD SERIES DESIGNATOR
(THSD) UNF ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 550.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
VOLTAGE TOLERANCE IN PERCENT
(CTQS) -2.0 TO 5.0 ALL TRANSISTOR
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC
(CTRD) 75.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
INCLOSURE MATERIAL
(ABBH) METAL ALL TRANSISTOR
VOLTAGE TOLERANCE IN PERCENT
(CTQS) -2.0/+5.0 ALL TRANSISTOR

Manufacturer Part Numbers

114BBA123

RNCC
5
RNVC
2
501

RNCC
C
RNVC
1
502

RNCC
C
RNVC
1
50641

RNCC
C
RNVC
1
50921N

RNCC
C
RNVC
1
512

RNCC
C
RNVC
1
61346673

RNCC
3
RNVC
2

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