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NSN 5961-00-840-3395, 5961008403395
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 008403395
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-840-3395

National Stock Number (NSN) 5961-00-840-3395, or NIIN 008403395, (semiconductor device,thyristor) was assigned December 21, 1966 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 4 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The Government has unlimited rights to the technical data, and the data package is complete. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961008403395 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL
(ABBH) METAL
CURRENT RATING PER CHARACTERISTIC
(CTQX) 55.00 AMPERES FORWARD CURRENT, AVERAGE MEGAHERTZ AND 35.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM AND 700.00 AMPERES FORWARD CURRENT, AVERAGE PRESET
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 55.00 AMPERES MAXIMUM REVERSE CURRENT, TOTAL RMS AND 35.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 700.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL LENGTH
(ABHP) 1.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.060 INCHES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) TERMINAL QTY 1 AND 2,TERMINAL TYPE,THREADED STUD AND SOLDERLESS; JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY
(TTQY) 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR
(THSD) UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 10.0 MAXIMUM FORWARD VOLTAGE, PEAK

Manufacturer Part Numbers

209M66

RNCC
5
RNVC
9
37RC60AX721

ISC
2
RNCC
5
RNVC
2
684721

ISC
2
RNCC
3
RNVC
2
929A5601

RNCC
5
RNVC
9
929A5601

RNCC
7
RNVC
2
37RC60AX721

RNCC
5
RNVC
2
684721

RNCC
3
RNVC
2

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