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NSN 5961-00-402-8161, 5961004028161
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 004028161
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-402-8161

National Stock Number (NSN) 5961-00-402-8161, or NIIN 004028161, (semiconductor device,thyristor) was assigned January 18, 1972 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, there are no suppliers listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is fairly common among different weapons systems, belonging to 17 different platforms.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Not established. Not established.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961004028161 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INCLOSURE MATERIAL
(ABBH) GLASS AND METAL
MATERIAL
(MATT) GLASS INCLOSURE
POWER RATING PER CHARACTERISTIC
(CTRD) 30.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 900.00 AMPERES SOURCE CUTOFF CURRENT ABSOLUTE AND 35.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM OF STANDARD RANGE AND 10.00 MILLIAMPERES FORWARD CURRENT, AVERAGE UNIVERSAL AND 80.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PRESET AND 70.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS AMBIENT AIR
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE AND UNABLE TO DECODE
UNPACKAGED UNIT WEIGHT (NON-CORE)
(PKWT) 8.5 GRAMS
UNABLE TO DECODE
(PKWT) UNABLE TO DECODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 900.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 35.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 10.00 MILLIAMPERES MAXIMUM BREAKOVER CURRENT, DC AND 80.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 70.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.501 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.404 INCHES NOMINAL
MATERIAL
(MATT) GLASS ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY
(TTQY) 2 SOLDER STUD AND 1 CASE
TEST DATA DOCUMENT
(TEST) 50985-8879600001 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 400.0 MAXIMUM BREAKOVER VOLTAGE, DC AND 2.0 MAXIMUM GATE TRIGGER VOLTAGE, DC

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