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NSN 5961-00-498-8429, 5961004988429
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 004988429
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-498-8429

National Stock Number (NSN) 5961-00-498-8429, or NIIN 004988429, (semiconductor device,thyristor) was assigned October 15, 1969 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, there are no suppliers listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Apr 02, 1991, this NSN's acquisition method was noted as: Not established. Not established.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961004988429 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
MOUNTING METHOD
(AXGY) THREADED STUD
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1400.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
POWER RATING PER CHARACTERISTIC
(CTRD) 2.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 1400.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 125.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD(S)
NOMINAL THREAD SIZE
(CQJX) 0.500 INCHES
OVERALL LENGTH
(ABHP) 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS
(CCDG) 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR
(THSD) UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 240.0 MAXIMUM BREAKOVER VOLTAGE, DC

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