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NSN 5961-00-760-1952, 5961007601952
Cancelled -> Replaced by 5961004282977

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 007601952
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-760-1952

National Stock Number (NSN) 5961-00-760-1952, or NIIN 007601952, (semiconductor device,thyristor) was assigned January 1, 1960 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN replaces 1 stock number, 5961004282977.

There are 2 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over a year. There have been 14 contracts issued for this part number, with 14 awards given. There is minimal competition for this NSN. The US Government has awarded contracts to 2 different suppliers. The last contract numbers awarded were: SPE7M524P7340, SPE7M523P6918, SPE7M023P4949, SPE7M523P4346, SPE7M023P2924. The total value of the awarded contracts has been US$ 34,068.50.

This NSN is somewhat common among different platforms, belonging to 5 different weapons systems.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. The 24 month forecast from the US Government for this part number has high volatility, with an estimated forecasted value of US$ 33,502. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Dec 13, 2008, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961007601952 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
INCLOSURE MATERIAL
(ABBH) METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 105.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL LENGTH
(ABHP) 1.222 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.437 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 105.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD(S)
NOMINAL THREAD SIZE
(CQJX) 0.190 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY
(TTQY) 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR
(THSD) UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
MOUNTING METHOD
(AXGY) THREADED STUD

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