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NSN 5961-01-516-5912, 5961015165912
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 015165912
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-516-5912

National Stock Number (NSN) 5961-01-516-5912, or NIIN 015165912, (semiconductor device,diode) was assigned January 12, 2004 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There is only one manufacturer part number associated with this NSN. None of the associated part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, there are no suppliers listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961015165912 does not contain precious metals.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED
(AFZC) SIGNAL DIODE
MATERIAL
(MATT) GLASS INCLOSURE
MATERIAL
(MATT) SILICON SEMICONDUCTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) -65.0 CELSIUS CASE AND 175.0 CELSIUS CASE
MOUNTING FACILITY QUANTITY
(AKPV) 2
MOUNTING METHOD
(AXGY) TERMINAL
OVERALL LENGTH
(ABHP) 2.200 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER
(AYQS) 0.090 INCHES MAXIMUM
TERMINAL LENGTH
(ABJT) 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
SPECIAL FEATURES
(FEAT) STORAGE TEMPERATURE -65 TO 175 DEGREES C; TOTAL POWER DISSIPATION 500MW; CURRENT: 200MA; HERMETICALLY SEALED GLASS PACKAGE; CATHODE BAND POLARITY; ALPHA NUMERIC MARKING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 2.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
INCLOSURE MATERIAL
(ABBH) GLASS

Manufacturer Part Numbers


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