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NSN 5961-00-102-5802, 5961001025802
TRANSISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 001025802
Codification Country
United States
Item Name Code
INC 20588
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-102-5802

National Stock Number (NSN) 5961-00-102-5802, or NIIN 001025802, (transistor) was assigned May 29, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 5 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 6 suppliers. Today, 4 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961001025802 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

INCLOSURE MATERIAL
(ABBH) METAL
MOUNTING METHOD
(AXGY) UNTHREADED HOLE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-3
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
POWER RATING PER CHARACTERISTIC
(CTRD) 115.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
CURRENT RATING PER CHARACTERISTIC
(CTQX) 15.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 7.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 1 CASE AND 2 UNINSULATED WIRE LEAD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS JUNCTION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTORCOLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.00 AMPERES MAXIMUM BASE CURRENT, DC7.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACTJUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPNNPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) TO-3TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 11
MOUNTING METHOD
(AXGY) UNTHREADED HOLEUNTHREADED HOLE
OVERALL DIAMETER
(ADAV) 0.875 INCHES MAXIMUM0.875 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.450 INCHES MAXIMUM0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC
(CTRD) 115.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION115.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICONSILICON
TERMINAL TYPE AND QUANTITY
(TTQY) 1 CASE AND 1 CASE AND 2 UNINSULATED WIRE LEAD2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
INTERNAL JUNCTION CONFIGURATION
(ASCQ) NPN
MOUNTING FACILITY QUANTITY
(AKPV) 1

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