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NSN 5961-01-321-1921, 5961013211921
SEMICONDUCTOR DEVICE SET

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013211921
Codification Country
United States
Item Name Code
INC 20590
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-321-1921

National Stock Number (NSN) 5961-01-321-1921, or NIIN 013211921, (semiconductor device set) was assigned June 13, 1990 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, 2 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 3 different weapons systems.

There has been very little demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part is a commercial/non-developmental/off-the-shelf-item. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20590. [A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES:ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013211921 does not contain precious metals.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

UNABLE TO DECODE
(ABBH) UNABLE TO DECODE
POWER RATING PER CHARACTERISTIC
(CTRD) 135.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 25.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 85.0 DEG CELSIUS JUNCTION ALL LIGHT EMITTING DIODE
INCLOSURE MATERIAL
(ABBH) PLASTIC ALL LIGHT EMITTING DIODE
COLOR TONE PRODUCED PER SOURCE
(CTRX) RED LENS ALL LIGHT EMITTING DIODE
COMPONENT FUNCTION RELATIONSHIP
(ASDD) MATCHED
COMPONENT NAME AND QUANTITY
(ASKA) 4 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL LIGHT EMITTING DIODE
LENS TRANSPARENCY
(AEXK) TRANSPARENT ALL LIGHT EMITTING DIODE
LUMINOUS INTENSITY
(CTSB) 6.0 MILLICANDELA MINIMUM ALL LIGHT EMITTING DIODE
OVERALL HEIGHT
(ABKW) 0.245 INCHES MAXIMUM ALL LIGHT EMITTING DIODE
OVERALL LENGTH
(ABHP) 0.400 INCHES MAXIMUM ALL LIGHT EMITTING DIODE
OVERALL WIDTH
(ABMK) 0.150 INCHES NOMINAL ALL LIGHT EMITTING DIODE
MATERIAL
(MATT) PLASTIC INCLOSURE ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 85.0 CELSIUS JUNCTION ALL LIGHT EMITTING DIODE
MOUNTING METHOD
(AXGY) TERMINAL ALL LIGHT EMITTING DIODE
POWER RATING PER CHARACTERISTIC
(CTRD) 135.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL
(CTMZ) GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 2.6 MAXIMUM FORWARD VOLTAGE, DC ALL LIGHT EMITTING DIODE
TERMINAL LENGTH
(ABJT) 0.125 INCHES MINIMUM ALL LIGHT EMITTING DIODE
TERMINAL TYPE AND QUANTITY
(TTQY) 4 PIN ALL LIGHT EMITTING DIODE

Manufacturer Part Numbers


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