NSN 1560-15-107-0801, 1560151070801
FINESTRA ACCESSO

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 50.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CURRENT RATING PER CHARACTERISTIC: (CTQX) -10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: (ABBH) PLASTIC
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL HEIGHT: (ABKW) 0.190 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.420 INCHES MAXIMUM
OVERALL WIDTH: (ABMK) 0.358 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: (AKPV) 1
MOUNTING METHOD: (AXGY) UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
POWER RATING PER CHARACTERISTIC: (CTRD) 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
CURRENT RATING PER CHARACTERISTIC: (CTQX) -10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM